IPD320N20N3 Datasheet, Mosfet, INCHANGE

IPD320N20N3 Features

  • Mosfet
  • Static drain-source on-resistance: RDS(on)≤32mΩ
  • Enhancement mode:
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance a

PDF File Details

Part number:

IPD320N20N3

Manufacturer:

INCHANGE

File Size:

238.17kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IPD320N20N3 📥 Download PDF (238.17kb)
Page 2 of IPD320N20N3

IPD320N20N3 Application

  • Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD320N20N3
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

IPD320N20N3 - Power-Transistor (Infineon)
IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPD320N20N3G - Power-Transistor (Infineon)
IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPD30N03S2L - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD30N03S2L ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low .

IPD30N03S2L-07 - Power-Transistor (Infineon)
IPD30N03S2L-07 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak .

IPD30N03S2L-10 - Power-Transistor (Infineon)
IPD30N03S2L-10 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak .

IPD30N03S2L-20 - Power-Transistor (Infineon)
IPD30N03S2L-20 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak .

IPD30N03S4L-09 - Power-Transistor (Infineon)
IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 9.0 30 PG-TO252-3-11 V mΩ A Features • N-channel - Enhancement .

IPD30N03S4L-14 - Power-Transistor (Infineon)
IPD30N03S4L-14 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 13.6 30 V mΩ A Features • N-channel - Enhancement mode • Automo.

IPD30N06S2-15 - Power-Transistor (Infineon)
IPD30N06S2-15 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°.

IPD30N06S2-23 - Power-Transistor (Infineon)
IPD30N06S2-23 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°.

Stock and price

Infineon Technologies AG
MOSFET N-CH 200V 34A TO252-3
DigiKey
IPD320N20N3GATMA1
4022 In Stock
Qty : 2500 units
Unit Price : $1.23
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts