IPD50R950CE - N-Channel MOSFET
IPD50R950CE Features
* Static drain-source on-resistance: RDS(on)≤0.95Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* Very high commutation ruggedness
* ABSOLUTE MAXIMUM RATINGS(Ta
