IPD50R650CE Datasheet, Mosfet, INCHANGE

IPD50R650CE Features

• Mosfet
• Static drain-source on-resistance: RDS(on)≤650mΩ
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance

PDF File Details

Part number:

IPD50R650CE

Manufacturer:

INCHANGE

File Size:

237.66kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPD50R650CE Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD50R650CE

INCHANGE

📁 Related Datasheet

IPD50R650CE - MOSFET (Infineon)
IPD50R650CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD50R1K4CE - MOSFET (Infineon)
IPD50R1K4CE, IPU50R1K4CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD50R1K4CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD50R1K4CE,IIPD50R1K4CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanch.

IPD50R280CE - MOSFET (Infineon)
IPD50R280CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD50R280CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanc.

IPD50R2K0CE - MOSFET (Infineon)
IPD50R2K0CE, IPU50R2K0CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD50R2K0CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD50R2K0CE,IIPD50R2K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche .

IPD50R380CE - Power Transistor (Infineon)
IPD50R380CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD50R380CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD50R380CE,IIPD50R380CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanc.

IPD50R399CP - Power Transistor (Infineon)
CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • P.