IPD50R3K0CE Datasheet, Mosfet, Infineon

IPD50R3K0CE Features

• Mosfet
• Extremely low losses due to very low FOM Rdson
• Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Pb-free plating, Halogen fr

PDF File Details

Part number:

IPD50R3K0CE

Manufacturer:

Infineon ↗

File Size:

1.30MB

Download:

📄 Datasheet

Description:

Mosfet.

IPD50R3K0CE Application

• Applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switchin

TAGS

IPD50R3K0CE

Infineon

📁 Related Datasheet

IPD50R3K0CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD50R3K0CE,IIPD50R3K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3Ω ·Enhancement mode: ·100% avalanche .

IPD50R380CE - Power Transistor (Infineon)
IPD50R380CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD50R380CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD50R380CE,IIPD50R380CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanc.

IPD50R399CP - Power Transistor (Infineon)
CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • P.

IPD50R399CP - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤399mΩ ·Enhancement mode: ·100% avalanc.

IPD50R1K4CE - MOSFET (Infineon)
IPD50R1K4CE, IPU50R1K4CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD50R1K4CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD50R1K4CE,IIPD50R1K4CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanch.

IPD50R280CE - MOSFET (Infineon)
IPD50R280CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD50R280CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanc.

IPD50R2K0CE - MOSFET (Infineon)
IPD50R2K0CE, IPU50R2K0CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.