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IPD60R750E6

N-Channel MOSFET

IPD60R750E6 Features

* Static drain-source on-resistance: RDS(on)≤0.75Ω

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* High peak current capability

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

IPD60R750E6 Datasheet (238.54 KB)

Preview of IPD60R750E6 PDF

Datasheet Details

Part number:

IPD60R750E6

Manufacturer:

INCHANGE

File Size:

238.54 KB

Description:

N-channel mosfet.

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IPD60R750E6 N-Channel MOSFET INCHANGE

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