Datasheet Details
Part number:
IPD60R750E6
Manufacturer:
INCHANGE
File Size:
238.54 KB
Description:
N-Channel MOSFET
Features
* Static drain-source on-resistance: RDS(on)≤0.75Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High peak current capability
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
