IPD60R800CE N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IPD60R800CE,IIPD60R800CE *.

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Datasheet Specifications

Part number: IPD60R800CE
Manufacturer: INCHANGE
File Size: 238.11 KB
Datasheet: IPD60R800CE-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤0.8Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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IPD60R800CE N-Channel MOSFET INCHANGE

INCHANGE IPD60R800CE-like datasheet