IPD60R800CE Datasheet, Mosfet, INCHANGE

IPD60R800CE Features

  • Mosfet
  • Static drain-source on-resistance: RDS(on)≤0.8Ω
  • Enhancement mode:
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance a

PDF File Details

Part number:

IPD60R800CE

Manufacturer:

INCHANGE

File Size:

238.11kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IPD60R800CE 📥 Download PDF (238.11kb)
Page 2 of IPD60R800CE

IPD60R800CE Application

  • Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD60R800CE
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

IPD60R800CE - MOSFET (Infineon Technologies)
IPD60R800CE, IPA60R800CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD60R170CFD7 - MOSFET (Infineon)
IPD60R170CFD7 MOSFET 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD60R170CFD7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% ava.

IPD60R180C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPD60R180C7 Data Sheet Rev. 2.0 Final Power Man.

IPD60R180C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R180C7,IIPD60R180C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·Enhancement mode: ·100% avalanc.

IPD60R180CM8 - MOSFET (Infineon)
IPD60R180CM8 MOSFET 600V CoolMOSª CM8 Power Transistor The CoolMOS™ 8th generation platform is a revolutionary technology for high voltage power MOSF.

IPD60R180P7S - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R180P7S,IIPD60R180P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·Enhancement mode: ·100% avala.

IPD60R180P7S - MOSFET (Infineon)
IPD60R180P7S MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFE.

IPD60R1K0CE - MOSFET (Infineon Technologies)
IPD60R1K0CE, IPU60R1K0CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD60R1K0CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche .

Stock and price

Infineon Technologies AG
CONSUMER
DigiKey
IPD60R800CEAUMA1
0 In Stock
Qty : 1000 units
Unit Price : $0.34
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts