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IPD60R800CE

N-Channel MOSFET

IPD60R800CE Features

* Static drain-source on-resistance: RDS(on)≤0.8Ω

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Fast switching

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

IPD60R800CE Datasheet (238.11 KB)

Preview of IPD60R800CE PDF

Datasheet Details

Part number:

IPD60R800CE

Manufacturer:

INCHANGE

File Size:

238.11 KB

Description:

N-channel mosfet.

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IPD60R800CE N-Channel MOSFET INCHANGE

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