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IPP65R190C7

N-Channel MOSFET

IPP65R190C7 Features

* Static drain-source on-resistance: RDS(on) ≤0.19Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching super junction MOS

IPP65R190C7 General Description


*Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Dra.

IPP65R190C7 Datasheet (241.33 KB)

Preview of IPP65R190C7 PDF

Datasheet Details

Part number:

IPP65R190C7

Manufacturer:

INCHANGE

File Size:

241.33 KB

Description:

N-channel mosfet.

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IPP65R190C7 N-Channel MOSFET INCHANGE

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