Datasheet Details
- Part number
- IPW60R099P7
- Manufacturer
- INCHANGE
- File Size
- 238.34 KB
- Datasheet
- IPW60R099P7-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPW60R099P7 Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R099P7 IIPW60R099P7 *.
IPW60R099P7 Features
* Static drain-source on-resistance:
RDS(on)≤99mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
* Fast Switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
IPW60R099P7 Applications
* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field
📁 Related Datasheet
📌 All Tags
IPW60R099P7 Stock/Price