IRFB812 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IRFB812，IIRFB812 *.

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Datasheet Specifications

Part number: IRFB812
Manufacturer: INCHANGE
File Size: 240.39 KB
Datasheet: IRFB812-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 2.2Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Uninterruptible power supplies
* Motor control applicatio

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.6 IDM Drain Current-Single Pulsed 14.4 PD Total Dissipation @TC=25℃ 78 Tj Max. Operating Junction Temperature 150 Tstg Storage

IRFB812 Distributors

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IRFB812 N-Channel MOSFET INCHANGE

INCHANGE IRFB812-like datasheet