IRFR4510 Datasheet - INCHANGE

N-Channel MOSFET

* Static drain-source on-resistance: RDS(on)≤13.9mΩ

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* High Speed Power Switching

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

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IRFR4510

INCHANGE

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N-channel mosfet.

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IRFR4510 N-Channel MOSFET INCHANGE

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