IRFR4510PbF Datasheet - International Rectifier

IRFR4510PbF Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97784 IRFR4510PbF IRFU4510PbF HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 11.1m max. 13.9m ID (Silicon Limited) 63A S ID (Package.

IRFR4510PbF Features

* cle in avalanche = tav

* f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3

* BV

* Iav) = DT/ ZthJC Iav = 2DT/ [1.3

* BV

* Zth] EAS (AR) = PD (ave)

* tav Fig 15. Maximum Avalanche Ene

IRFR4510PbF Datasheet (316.00 KB)