IRFR410B Datasheet - Fairchild Semiconductor

IRFR410B 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFR410B Features

* 0.9A, 500V, RDS(on) = 10Ω @VGS = 10 V Low gate charge ( typical 5.1 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G S D-PAK IRFR Series I-PAK G D S IRFU Ser

IRFR410B_FairchildSemiconductor.pdf