IRFR420 Datasheet - Fairchild Semiconductor

IRFR420 Power MOSFET

Data Sheet IRFR420, IRFU420 January 2002 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swit.

IRFR420 Features

* 2.5A, 500V

* rDS(ON) = 3.000Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines fo

IRFR420 Datasheet (89.04 KB)

IRFR420 Datasheet Preview — Preview of IRFR420 PDF

Datasheet Details

Part number:

IRFR420

Manufacturer:

Fairchild Semiconductor

File Size:

89.04 KB

Description:

Power mosfet.

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IRFR420 Power MOSFET Fairchild Semiconductor

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