Datasheet4U Logo Datasheet4U.com

IRFR430 Power MOSFET

IRFR430 Description

$GYDQFHG 3RZHU 026)(7 IRFR430 .

IRFR430 Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max. ) @ VDS = 500V
* Lower RDS(ON): 1.169Ω (Typ. ) BVDSS = 500 V RDS(on)

📥 Download Datasheet

Preview of IRFR430 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFR430A - SMPS MOSFET (International Rectifier)
  • IRFR430APBF - HEXFET Power MOSFET (International Rectifier)
  • IRFR410 - N-Channel Power MOSFETs (Intersil Corporation)
  • IRFR4104 - Power MOSFET (International Rectifier)
  • IRFR4104PbF - Power MOSFET (International Rectifier)
  • IRFR4105 - Power MOSFET (International Rectifier)
  • IRFR4105PbF - Power MOSFET (International Rectifier)
  • IRFR4105Z - Power MOSFET (International Rectifier)

📌 All Tags

Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFR430-like datasheet