IRFR4105 Datasheet - International Rectifier

IRFR4105 Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRFR4105 Features

* tance Current Transformer -

* + RG

* dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD et4U.com DataShee DataSheet4U.com Driver Gate Drive P.W. Period D= P.W. Period VGS=10V

IRFR4105 Datasheet (350.58 KB)