IRFR430B Datasheet - Fairchild Semiconductor

IRFR430B, 500V N-Channel MOSFET

www.DataSheet4U.com IRFR430B / IRFU430B November 2001 IRFR430B / IRFU430B 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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IRFR430B_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

IRFR430B

Manufacturer:

Fairchild Semiconductor

File Size:

878.30 KB

Description:

500V N-Channel MOSFET

Features

* 3.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* D ◀ ▲
* G S D-PAK IRFR Series I-PAK G D S IRFU Ser

IRFR430B Distributors

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IRFR430B 500V N-Channel MOSFET Fairchild Semiconductor

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