IRFR430B Datasheet - Fairchild Semiconductor

IRFR430B - 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFR430B Features

* 3.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

* D ◀ ▲

* G S D-PAK IRFR Series I-PAK G D S IRFU Ser

IRFR430B_FairchildSemiconductor.pdf