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IRFR4104PbF Power MOSFET

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Description

PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET® Power MOSFET .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

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Applications

* D-Pak IRFR4104PbF I-Pak IRFU4104PbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM Max. 119

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