IRFZ48VS
INCHANGE
209.12kb
N-channel mosfet.
TAGS
📁 Related Datasheet
IRFZ48V - Power MOSFET
(International Rectifier)
PD - 93959A
IRFZ48V
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp.
IRFZ48V - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFZ48V, IIRFZ48V
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤12mΩ ·Enhancement mo.
IRFZ48VPBF - Power MOSFET
(International Rectifier)
PD - 94992A
IRFZ48VPbF
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Swi.
IRFZ48VS - Power MOSFET
(International Rectifier)
PD - 94051A
IRFZ48VS
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tem.
IRFZ48VSPBF - Power MOSFET
(International Rectifier)
PD - 95573
IRFZ48VSPbF
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l .
IRFZ48 - Power MOSFET
(Vishay)
.vishay.
IRFZ48
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)
60 VGS = 10 V
Q.
IRFZ48 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 35mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lo.
IRFZ48L - Power MOSFET
(Vishay)
.vishay.
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
IRFZ48N - N-Channel MOSFET
(NXP)
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standa.
IRFZ48N - Power MOSFET
(International Rectifier)
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche R.