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IRL520N TO-220C N-Channel MOSFET

IRL520N Description

isc N-Channel MOSFET Transistor IRL520N，IIRL520N *.

IRL520N Features

* Static drain-source on-resistance: RDS(on) ≤0.18Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Efficient and reliable device for use in a wide variety of a

IRL520N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 35 PD Total Dissipation @TC=25℃ 48 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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Datasheet Details

Part number
IRL520N
Manufacturer
INCHANGE
File Size
240.47 KB
Datasheet
IRL520N-INCHANGE.pdf
Description
TO-220C N-Channel MOSFET

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TO-220C N-Channel MOSFET INCHANGE
INCHANGE IRL520N-like datasheet