Datasheet4U Logo Datasheet4U.com

IRLR120N N-Channel MOSFET

IRLR120N Description

isc N-Channel MOSFET Transistor IRLR120N, IIRLR120N *.

IRLR120N Features

* Static drain-source on-resistance: RDS(on)≤185mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

IRLR120N Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of IRLR120N PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRLR120N
Manufacturer
INCHANGE
File Size
237.26 KB
Datasheet
IRLR120N-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRLR120NPBF - Power MOSFET (International Rectifier)
  • IRLR120 - HEXFET Power MOSFET (International Rectifier)
  • IRLR120A - N-CHANNEL MOSFET (Fairchild)
  • IRLR120PBF - POWER MOSFET (International Rectifier)
  • IRLR110 - POWER MOSFET (International Rectifier)
  • IRLR110A - Power MOSFET (Fairchild Semiconductor)
  • IRLR110PBF - Power MOSFET (International Rectifier)
  • IRLR130A - Advanced Power MOSFET (Fairchild Semiconductor)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE IRLR120N-like datasheet