IXFQ30N60X Datasheet - INCHANGE

IXFQ30N60X, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) ≤155mΩ@VGS= 10V
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Easy to Mount
* Space Savings
* High Power Density
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Plused 60 A PD Tot

IXFQ30N60X-INCHANGE.pdf