IXFQ10N80P Datasheet - IXYS Corporation

IXFQ10N80P Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P TO-220AB (IXFP) VDSS ID25 trr RDS(on) = 800V = 10A ≤ 1.1Ω ≤ 250ns TO-3P (IXFQ) G S D (TAB) G DS D (TAB) G D S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse.

IXFQ10N80P Features

* z z z z 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque TO-263 TO-220 TO-3P TO-247 (TO-220,TO-247) 300 260 1.13 / 10 2.5 3.0 5.5 6.0 Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 25 International Standard Packages Avalanche Rated Low Package Inductance Easy to Drive a

IXFQ10N80P Datasheet (168.74 KB)