IXFQ34N50P3 Datasheet - IXYS

IXFQ34N50P3 Power MOSFET

Polar3TM HiperFETTM Power MOSFET IXFQ34N50P3 IXFH34N50P3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on)  500V 34A 180m TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Solderi.

IXFQ34N50P3 Features

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* Laser Drivers

* AC a

IXFQ34N50P3-IXYS.pdf

IXFQ34N50P3 Datasheet Preview — Preview of IXFQ34N50P3 PDF

Datasheet Details

Part number:

IXFQ34N50P3

Manufacturer:

IXYS

File Size:

171.18 KB

Description:

Power mosfet.

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