IXFQ50N60P3 - Power MOSFET
Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-.
IXFQ50N60P3 Features
* Fast Intrinsic Rectifier
* Avalanche Rated
* Low RDS(ON) and QG
* Low Package Inductance
Advantages
* High Power Density
* Easy to Mount
* Space Savings
Applications
* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* Laser Drivers
* AC a