IXFQ28N60P3, IXFH28N60P3 Datasheet - IXYS Corporation

IXFQ28N60P3 - Polar3 HiperFET Power MOSFETs

Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFQ28N60P3 IXFH28N60P3 VDSS ID25 RDS(on) = 600V = 28A ≤ 260mΩ TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ .

IXFQ28N60P3 Features

* z z z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-3P TO-247 300 260 1.13 / 10 5.5 6.0 Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS

IXFH28N60P3_IXYSCorporation.pdf