* D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 μA VGS(th) VDS = VGS, ID = 2.5 mA Characteristic Values Min. Typ. Max. 800 V 3.0 5.5 V z International standard packages z Unclamped Inductive Switching (UIS) ra
IXFQ12N80P Datasheet (166.68 KB)
IXFQ12N80P
IXYS
166.68 KB
Power mosfet.
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS
VDSS = 800 V
ID25 = 12 A ≤RDS(on) 0.85 Ω
trr.
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