IXFQ12N80P - Power MOSFET
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr ≤ 250 ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSS VDGR V GS VGSM ID25 IDM IAR E AR EAS T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C TC = 25°C 800 V 800 V TO-3P (IXFQ) ±30 V ±40 V 12 A 36 A 6A G DS 30 mJ PLUS220 (IXF.
IXFQ12N80P Features
* D (TAB)
D = Drain TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BV DSS
V GS
=
0
V,
I
D
=
250
μA
VGS(th)
VDS = VGS, ID = 2.5 mA
Characteristic Values Min. Typ. Max.
800 V
3.0 5.5 V
z International standard packages z Unclamped Inductive Switching (UIS)
ra