IXFQ24N50P2 Datasheet - IXYS Corporation

IXFQ24N50P2, Power MOSFET

Advance Technical Information PolarP2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFQ24N50P2 VDSS ID.

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IXFQ24N50P2_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFQ24N50P2

Manufacturer:

IXYS Corporation

File Size:

141.51 KB

Description:

Power MOSFET

Applications

* Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 500 2.5 4.5 V V z z z z z ± 100 nA 25 μA 1 mA 270 mΩ Switch-Mode and Re

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IXFQ24N50P2 Power MOSFET IXYS Corporation

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