IXFQ24N50P2 Datasheet - IXYS Corporation

IXFQ24N50P2 - Power MOSFET

Advance Technical Information PolarP2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFQ24N50P2 VDSS ID25 RDS(on) trr(typ) = = ≤ ≤ 500V 24A 270mΩ 200ns TO-3P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C .

IXFQ24N50P2 Features

* z z z z Avalanche Rated Fast Intrinsic Diode Dynamic dv/dt Rated Low Package Inductance Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque 300 260 1.13/10 5.5 Advantages High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C, Unles

IXFQ24N50P2_IXYSCorporation.pdf

IXFQ24N50P2 Datasheet Preview — Preview of IXFQ24N50P2 PDF

Datasheet Details

Part number:

IXFQ24N50P2

Manufacturer:

IXYS Corporation

File Size:

141.51 KB

Description:

Power mosfet.

IXFQ24N50P2 Distributor

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IXFQ24N50P2 Power MOSFET IXYS Corporation