IXTP200N055T2 Datasheet - INCHANGE

IXTP200N055T2, N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTP200N055T2 *

Features

* Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 200 IDM Drain Current-Single Pulsed 500 PD Total Dissipation @TC=25℃ 360 Tj Operating Junction Temperature -55~175 Tstg Storage Te

IXTP200N055T2-INCHANGE.pdf