IXTP2N60P Datasheet, Mosfet, INCHANGE

✔ IXTP2N60P Features

Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V
Fully characterized avalanche voltage and current
100% avalanche tested
Minimum Lot-to-Lot variations for ro

✔ IXTP2N60P Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not d

PDF File Details

INCHANGE manufacturer logo and representative part image

Part number:

IXTP2N60P

Manufacturer:

INCHANGE

File Size:

246.48kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

📥 Download PDF (246.48kb)

📁 Related Datasheet

IXTP2N60P - Power MOSFET (IXYS Corporation)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N60P IXTP2N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg .

IXTP2N65X2 - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY2N65X2 IXTP2N65X2 VDSS = ID25 = RDS(on) 650V 2A 2.3 Symb.

IXTP2N65X2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP2N65X2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.3Ω@VGS=10V ·Fully characterized avalanche volta.

IXTP2N100 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7Ω@VGS=10V ·Fully characterized avalanche voltage and current.

IXTP2N100 - Power MOSFET (IXYS Corporation)
High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS V.

IXTP2N100P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP2N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.5Ω@VGS=10V ·Fully characterized avalanche volta.

IXTP2N100P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N100P IXTA2N100P IXTP2N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD.

IXTP2N80 - High Voltage MOSFET (IXYS Corporation)
Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V.

IXTP2N80 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP2N80 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.2Ω@VGS=10V ·Fully characterized avalanche voltage.

IXTP2N80P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP2N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage .

Stock and price

IXYS Corporation

MOSFET N-CH 600V 2A TO220AB

DigiKey

IXTP2N60P

0 In Stock

Unit Price : $0

🛒 Buy Now

TAGS

IXTP2N60P N-Channel MOSFET INCHANGE