IXTP2N65X2, IXTY2N65X2 Datasheet - IXYS

IXTP2N65X2 - Power MOSFET

Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY2N65X2 IXTP2N65X2 VDSS = ID25 = RDS(on) 650V 2A 2.3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10.

IXTP2N65X2 Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

* AC and DC