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IXTP2N80P - N-Channel MOSFET

IXTP2N80P Description

isc N-Channel MOSFET Transistor IXTP2N80P *.

IXTP2N80P Features

* Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTP2N80P Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IXTP2N80P
Manufacturer
INCHANGE
File Size
247.27 KB
Datasheet
IXTP2N80P-INCHANGE.pdf
Description
N-Channel MOSFET

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