IXTP2N80 Datasheet - IXYS Corporation

IXTP2N80, High Voltage MOSFET

Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V.

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IXTP2N80_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTP2N80

Manufacturer:

IXYS Corporation

File Size:

49.66 KB

Description:

High Voltage MOSFET

Features

* Maximum lead temperature for soldering International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

Applications

* VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Switch-mode and resonant-mode power supplies Flyback inverters DC choppers Advantages VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Space savi

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IXTP2N80 High Voltage MOSFET IXYS Corporation

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