Datasheet Specifications
- Part number
- IXTP2N80
- Manufacturer
- IXYS Corporation
- File Size
- 49.66 KB
- Datasheet
- IXTP2N80_IXYSCorporation.pdf
- Description
- High Voltage MOSFET
Description
Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V.
Features
* Maximum lead temperature for soldering International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unlessApplications
* VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Switch-mode and resonant-mode power supplies Flyback inverters DC choppers Advantages VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Space saviIXTP2N80 Distributors
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