IXTP2N60P
IXYS Corporation
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Power mosfet.
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IXTP2N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP2N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.1Ω@VGS=10V ·Fully characterized avalanche voltag.
IXTP2N65X2 - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTY2N65X2 IXTP2N65X2
VDSS = ID25 = RDS(on)
650V 2A 2.3
Symb.
IXTP2N65X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP2N65X2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.3Ω@VGS=10V ·Fully characterized avalanche volta.
IXTP2N100 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7Ω@VGS=10V ·Fully characterized avalanche voltage and current.
IXTP2N100 - Power MOSFET
(IXYS Corporation)
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA2N100 IXTP2N100
VDSS = ID25 = ≤RDS(on)
1000V 2A 7Ω
TO-263 (IXTA)
Symbol VDSS V.
IXTP2N100P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP2N100P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7.5Ω@VGS=10V ·Fully characterized avalanche volta.
IXTP2N100P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY2N100P IXTA2N100P IXTP2N100P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD.
IXTP2N80 - High Voltage MOSFET
(IXYS Corporation)
Advanced Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 2N80 IXTP 2N80
VDSS ID25
RDS(on)
= 800 V.
IXTP2N80 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP2N80
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.2Ω@VGS=10V ·Fully characterized avalanche voltage.
IXTP2N80P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP2N80P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage .
