KSC5027F NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: KSC5027F
Manufacturer: INCHANGE
File Size: 211.57 KB
Datasheet: KSC5027F-INCHANGE.pdf
Description: NPN Transistor

Applications

* Switching regulator and high voltage switching applications
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Coll

KSC5027F Distributors

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KSC5027F NPN Transistor INCHANGE

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