Datasheet4U Logo Datasheet4U.com

KSC5027F NPN Transistor

KSC5027F Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

KSC5027F Applications

* Switching regulator and high voltage switching applications
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Coll

📥 Download Datasheet

Preview of KSC5027F PDF
datasheet Preview Page 2

Datasheet Details

Part number
KSC5027F
Manufacturer
INCHANGE
File Size
211.57 KB
Datasheet
KSC5027F-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • KSC5027 - NPN Silicon Transistor (ON Semiconductor)
  • KSC5020 - NPN Epitaxial Silicon Transistor (Samsung semiconductor)
  • KSC5021 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • KSC5022 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSC5023 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSC5024 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSC5025 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSC5026 - Silicon NPN Power Transistor (Inchange Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE KSC5027F-like datasheet