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MDP1922 - N-Channel MOSFET

MDP1922 Description

isc N-Channel MOSFET Transistor *.

MDP1922 Features

* Static drain-source on-resistance: RDS(on) ≤8.4mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

MDP1922 Applications

* Be suitable for DC/DC converters and general purpose applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 97 IDM Drain Current-Single Pulsed 384 PD Total Dissipation @TC=

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Datasheet Details

Part number
MDP1922
Manufacturer
INCHANGE
File Size
240.67 KB
Datasheet
MDP1922-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE MDP1922-like datasheet

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