Datasheet4U Logo Datasheet4U.com

MJ11031 - PNP Transistor

📥 Download Datasheet

Preview of MJ11031 PDF
datasheet Preview Page 2

Datasheet Details

Part number MJ11031
Manufacturer INCHANGE
File Size 203.97 KB
Description PNP Transistor
Datasheet download datasheet MJ11031-INCHANGE.pdf

MJ11031 Product details

Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -90V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A Complement to the NPN MJ11030 Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11031 APPLICATIONS Designed for use as output devices in complementary general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO C

📁 MJ11031 Similar Datasheet

  • MJ11030 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11032 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11033 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11012 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
  • MJ11013 - DARLINGTON POWER TRANSISTORS (ON Semiconductor)
  • MJ11014 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
  • MJ11015 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
  • MJ11016 - High-Current Complementary Silicon NPN Transistors (ON Semiconductor)
Other Datasheets by INCHANGE
Published: |