Datasheet4U Logo Datasheet4U.com

MJ11031 PNP Transistor

MJ11031 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -90V(Min. High DC Current Gain- : hFE= 1000(Min. C.

MJ11031 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -5 V IC Collector Current

📥 Download Datasheet

Preview of MJ11031 PDF
datasheet Preview Page 2

Datasheet Details

Part number
MJ11031
Manufacturer
INCHANGE
File Size
203.97 KB
Datasheet
MJ11031-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • MJ11030 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11032 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11033 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11012 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
  • MJ11013 - DARLINGTON POWER TRANSISTORS (ON Semiconductor)
  • MJ11014 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
  • MJ11015 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
  • MJ11016 - High-Current Complementary Silicon NPN Transistors (ON Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE MJ11031-like datasheet