MJ11033 PNP Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification MJ11033 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min. High DC Current Gain- : hFE= 1000(Min.

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Datasheet Specifications

Part number: MJ11033
Manufacturer: INCHANGE
File Size: 182.38 KB
Datasheet: MJ11033-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Curre

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MJ11033 PNP Transistor INCHANGE

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