Datasheet4U Logo Datasheet4U.com

MJ11033 PNP Transistor

MJ11033 Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification MJ11033 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min. High DC Current Gain- : hFE= 1000(Min.

MJ11033 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Curre

📥 Download Datasheet

Preview of MJ11033 PDF
datasheet Preview Page 2

Datasheet Details

Part number
MJ11033
Manufacturer
INCHANGE
File Size
182.38 KB
Datasheet
MJ11033-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • MJ11030 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11031 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11032 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11012 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
  • MJ11013 - DARLINGTON POWER TRANSISTORS (ON Semiconductor)
  • MJ11014 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
  • MJ11015 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)
  • MJ11016 - High-Current Complementary Silicon NPN Transistors (ON Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE MJ11033-like datasheet