MJ3000 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlingtion Power Transistor .
Built-in Base-Emitter Shunt Resistors. High DC current gain hFE = 1000 (Min) @ IC = 5A. Collector-Emitter Breakdown Voltage V(BR)CEO= 60V.

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Datasheet Specifications

Part number: MJ3000
Manufacturer: INCHANGE
File Size: 202.51 KB
Datasheet: MJ3000-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Cont

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MJ3000 NPN Transistor INCHANGE

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