Datasheet4U Logo Datasheet4U.com

MJ3000 NPN Transistor

MJ3000 Description

isc Silicon NPN Darlingtion Power Transistor .
Built-in Base-Emitter Shunt Resistors. High DC current gain hFE = 1000 (Min) @ IC = 5A. Collector-Emitter Breakdown Voltage V(BR)CEO= 60V.

MJ3000 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Cont

📥 Download Datasheet

Preview of MJ3000 PDF
datasheet Preview Page 2

Datasheet Details

Part number
MJ3000
Manufacturer
INCHANGE
File Size
202.51 KB
Datasheet
MJ3000-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • MJ3001 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (Motorola)
  • MJ3055 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • MJ3101 - Bipolar NPN Device (Seme LAB)
  • MJ3202 - Bipolar NPN Device (Seme LAB)
  • MJ3281A - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
  • MJ3738 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • MJ3771 - HIGH-POWER NPN SILICON TRANSISTORS (Motorola)
  • MJ3772 - HIGH-POWER NPN SILICON TRANSISTORS (Motorola)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE MJ3000-like datasheet