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MJ3001 NPN Transistor

MJ3001 Description

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor MJ3001 .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 1000 (Min) @ IC = 5A. Collector-Emitter Breakdown Voltage- V(BR)CEO= 8.

MJ3001 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Cont

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Datasheet Details

Part number
MJ3001
Manufacturer
INCHANGE
File Size
202.79 KB
Datasheet
MJ3001-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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