Datasheet4U Logo Datasheet4U.com

MJ413 NPN Transistor

MJ413 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min. DC Current Gain- : hFE= 20-80@ IC= 0. Minimum Lot-to-Lot variation.

MJ413 Applications

* Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER UNIT VALUE VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 5 V IC Collector Current-C

📥 Download Datasheet

Preview of MJ413 PDF
datasheet Preview Page 2

Datasheet Details

Part number
MJ413
Manufacturer
INCHANGE
File Size
210.28 KB
Datasheet
MJ413-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • MJ411 - Bipolar NPN Device (Seme LAB)
  • MJ400 - Bipolar NPN Device (Seme LAB)
  • MJ4030 - Power Transistors (Mospec)
  • MJ4031 - (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS (Comset Semiconductors)
  • MJ4032 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (ST Microelectronics)
  • MJ4033 - Power Transistors (Mospec)
  • MJ4034 - (MJ4033 - MJ4035) SILICON POWER TRANSISTOR (SavantIC)
  • MJ4035 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (ST Microelectronics)

📌 All Tags

INCHANGE MJ413-like datasheet