MJE15034 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor MJE15034 .
Collector-Emitter Breakdown Voltage : V(BR)CEO=350V. Good Linearity of hFE. Complement to Type MJE15035. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: MJE15034
Manufacturer: INCHANGE
File Size: 214.79 KB
Datasheet: MJE15034-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications
* Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM -P

MJE15034 Distributors

📁 Related Datasheet

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MJE15034 NPN Transistor INCHANGE

INCHANGE MJE15034-like datasheet