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PSMN3R7-100BSE N-Channel MOSFET

PSMN3R7-100BSE Description

Isc N-Channel MOSFET Transistor PSMN3R7-100BSE *.

PSMN3R7-100BSE Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

PSMN3R7-100BSE Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 780 PD Total Dissipation @TC=25℃ 405 Tch Max. Operating Junction Te

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Datasheet Details

Part number
PSMN3R7-100BSE
Manufacturer
INCHANGE
File Size
254.23 KB
Datasheet
PSMN3R7-100BSE-INCHANGE.pdf
Description
N-Channel MOSFET

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