* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applic
PSMN3R7-30YLC Datasheet (415.54 KB)
PSMN3R7-30YLC
NXP ↗ Semiconductors
415.54 KB
N-channel mosfet.
LF PA K
PSMN3R7-30YLC
N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 01
* 2 May 2011 Product data sheet
1.
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