* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads 1.3 Applica
PSMN3R7-25YLC Datasheet (419.96 KB)
PSMN3R7-25YLC
NXP ↗ Semiconductors
419.96 KB
N-channel mosfet.
www.DataSheet.co.kr
LF PA K
PSMN3R7-25YLC
N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 01
* 2 May 2011 .
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