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PSMN130-200D N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor PSMN130-200D *.

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Datasheet Specifications

Part number
PSMN130-200D
Manufacturer
INCHANGE
File Size
257.62 KB
Datasheet
PSMN130-200D-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 80 PD Total Dissipation @TC=25℃ 150 Tch Max. Operating Junction Temp

PSMN130-200D Distributors

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