R6011ENJ N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor R6011ENJ .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number: R6011ENJ
Manufacturer: INCHANGE
File Size: 250.62 KB
Datasheet: R6011ENJ-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 11A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 390mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 22 A PD Total Dissipation @TC=25℃ 124 W TJ Max. Operating Junction Temperat

R6011ENJ Distributors

📁 Related Datasheet

R6011KNJ R6011KNX R601 R6010ANX R6010MND3 R6012ANJ

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R6011ENJ N-Channel MOSFET INCHANGE

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