Datasheet4U Logo Datasheet4U.com

R6015ENJ

N-Channel MOSFET

R6015ENJ Features

* Drain Current

* ID= 15A@ TC=25℃

* Drain Source Voltage- : VDSS=600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use

R6015ENJ General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Plus.

R6015ENJ Datasheet (250.59 KB)

Preview of R6015ENJ PDF

Datasheet Details

Part number:

R6015ENJ

Manufacturer:

INCHANGE

File Size:

250.59 KB

Description:

N-channel mosfet.

📁 Related Datasheet

R6015ENJ Power MOSFET (ROHM)

R6015ENX Power MOSFET (ROHM)

R6015ENX N-Channel MOSFET (INCHANGE)

R6015ENZ N-Channel MOSFET (INCHANGE)

R6015ENZ Power MOSFET (ROHM)

R6015ANJ Drive Nch MOSFET (Rohm)

R6015ANX Power MOSFET (Rohm)

R6015ANZ Nch 600V 15A Power MOSFET (Rohm)

R6015FNX Power MOSFET (Rohm)

R6015KNJ N-Channel MOSFET (INCHANGE)

TAGS

R6015ENJ N-Channel MOSFET INCHANGE

Image Gallery

R6015ENJ Datasheet Preview Page 2

R6015ENJ Distributor