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R6504ENX - N-Channel MOSFET

R6504ENX Description

isc N-Channel MOSFET Transistor R6504ENX .
Designed for use in switch mode power supplies and general purpose applications.

R6504ENX Features

* Drain Current
* ID= 4.0A@ TC=25℃
* Drain Source Voltage- : VDSS=650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max)
* 100% avalanche tested

R6504ENX Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 4.0 A IDM Drain Current-Single Pluse 12 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperat

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Datasheet Details

Part number
R6504ENX
Manufacturer
INCHANGE
File Size
247.06 KB
Datasheet
R6504ENX-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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