Datasheet Details
- Part number
- R6504ENX
- Manufacturer
- INCHANGE
- File Size
- 247.06 KB
- Datasheet
- R6504ENX-INCHANGE.pdf
- Description
- N-Channel MOSFET
R6504ENX Description
isc N-Channel MOSFET Transistor R6504ENX .
Designed for use in switch mode power supplies and general
purpose applications.
R6504ENX Features
* Drain Current
* ID= 4.0A@ TC=25℃
* Drain Source Voltage-
: VDSS=650V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 1.05Ω(Max)
* 100% avalanche tested
R6504ENX Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
4.0
A
IDM
Drain Current-Single Pluse
12
A
PD
Total Dissipation @TC=25℃
40
W
TJ
Max. Operating Junction Temperat
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