R6509ENJ - N-Channel MOSFET

INCHANGE

R6509ENJ Datasheet Preview — Preview of R6509ENJ PDF

Datasheet Details

Part number	R6509ENJ
Manufacturer	INCHANGE
File Size	250.88 KB
Description	N-Channel MOSFET
Datasheet	R6509ENJ-INCHANGE.pdf

R6509ENJ Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 94 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resi

Features

Drain Current.
ID= 9A@ TC=25℃.
Drain Source Voltage- : VDSS=650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 585mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 R6509ENJ Similar Datasheet

R6509KND3 - Nch 650V 9A Power MOSFET (ROHM)
R6500 - Microcomputer Hardware Manual (Rockwell)
R6500-1 - One-Chip Microcomputer (Rockwell)
R6500-11 - One-Chip Microcomputers (Rockwell)
R6500-12 - One-Chip Microcomputers (Rockwell)
R6500-13 - One-Chip Microprocessor (Rockwell)
R6500-15 - One-Chip Microcomputers (Rockwell)
R6500-16 - One-Chip Microcomputer (Rockwell)

Other Datasheets by INCHANGE

R6509ENX - N-Channel MOSFET
R6509KNJ - N-Channel MOSFET
R6509KNX - N-Channel MOSFET
R6504ENJ - N-Channel MOSFET
R6504ENX - N-Channel MOSFET
R6504KNJ - N-Channel MOSFET

Published: Mar 1, 2021 |