Datasheet4U Logo Datasheet4U.com

R6509KNX

N-Channel MOSFET

R6509KNX Features

* Drain Current

* ID= 9A@ TC=25℃

* Drain Source Voltage- : VDSS=650V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 585mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use i

R6509KNX General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse.

R6509KNX Datasheet (248.25 KB)

Preview of R6509KNX PDF

Datasheet Details

Part number:

R6509KNX

Manufacturer:

INCHANGE

File Size:

248.25 KB

Description:

N-channel mosfet.

📁 Related Datasheet

R6509KND3 Nch 650V 9A Power MOSFET (ROHM)

R6509KNJ N-Channel MOSFET (INCHANGE)

R6509KNJ Power MOSFET (ROHM)

R6509KNX Power MOSFET (ROHM)

R6509ENJ N-Channel MOSFET (INCHANGE)

R6509ENJ Power MOSFET (ROHM)

R6509ENX N-Channel MOSFET (INCHANGE)

R6509ENX Power MOSFET (ROHM)

R6500 Microcomputer Hardware Manual (Rockwell)

R6500-1 One-Chip Microcomputer (Rockwell)

TAGS

R6509KNX N-Channel MOSFET INCHANGE

Image Gallery

R6509KNX Datasheet Preview Page 2

R6509KNX Distributor